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| RdsOn(Max)@Id | 1.5V @ 1mA |
|---|---|
| Vgs(th)(Max)@Id | ±20V |
| Vgs | 2.4 nC @ 10 V |
| FETFeature | 360mW (Ta) |
| DraintoSourceVoltage(Vdss) | 50 V |
| OperatingTemperature | Surface Mount |
| DriveVoltage(MaxRdsOn | 4.5V, 10V |
| ProductStatus | Obsolete |
| Package/Case | - |
| GateCharge(Qg)(Max)@Vgs | - |
| Grade | |
| MountingType | EFCP1313-4CC-037 |
| InputCapacitance(Ciss)(Max)@Vds | - |
| Series | - |
| Qualification | |
| SupplierDevicePackage | 4-XFBGA |
| FETType | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Current-ContinuousDrain(Id)@25°C | 220mA (Ta) |
| Vgs(Max) | 27 pF @ 25 V |
| MinRdsOn) | 3.5Ohm @ 220mA, 10V |
| Package | Bulk |
| PowerDissipation(Max) | -55°C ~ 150°C (TJ) |
INFINEON
Small Signal Field-Effect Transistor, 0.19A I(D), 100V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, GREEN, PLASTIC PACKAGE-3
Diodes Incorporated
Small Signal Field-Effect Transistor, 0.17A I(D), 100V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, GREEN, PLASTIC PACKAGE-3
