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BSC059N03ST

BSC059N03ST

Infineon Technologies

MOSFET N-CH 30V 19A/89A TDSON

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Products Specifications
RdsOn(Max)@Id2V @ 35µA
Vgs(th)(Max)@Id±20V
Vgs21 nC @ 5 V
FETFeature-
DraintoSourceVoltage(Vdss)30 V
OperatingTemperatureSurface Mount
DriveVoltage(MaxRdsOn4.5V, 10V
ProductStatusDiscontinued at Digi-Key
Package/Case
GateCharge(Qg)(Max)@Vgs
Grade
MountingTypePG-TDSON-8-1
InputCapacitance(Ciss)(Max)@Vds-
SeriesOptiMOS™
Qualification
SupplierDevicePackage8-PowerTDFN
FETTypeN-Channel
TechnologyMOSFET (Metal Oxide)
Current-ContinuousDrain(Id)@25°C19A (Ta), 89A (Tc)
Vgs(Max)2670 pF @ 15 V
MinRdsOn)5.5mOhm @ 50A, 10V
PackageTape & Reel (TR)
PowerDissipation(Max)-55°C ~ 150°C (TJ)
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