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BSC014N03LSGATMA1

BSC014N03LSGATMA1

Infineon Technologies

MOSFET N-CH 30V 34A/100A TDSON

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Products Specifications
RdsOn(Max)@Id131 nC @ 10 V
Vgs(th)(Max)@Id-
Vgs10000 pF @ 15 V
FETFeatureSurface Mount
DraintoSourceVoltage(Vdss)30 V
OperatingTemperature8-PowerTDFN
DriveVoltage(MaxRdsOn1.4mOhm @ 30A, 10V
ProductStatusObsolete
Package/Case
GateCharge(Qg)(Max)@Vgs
Grade
MountingType4.5V, 10V
InputCapacitance(Ciss)(Max)@Vds-55°C ~ 150°C (TJ)
SeriesOptiMOS™
Qualification
SupplierDevicePackage±20V
FETTypeN-Channel
TechnologyMOSFET (Metal Oxide)
Current-ContinuousDrain(Id)@25°C34A (Ta), 100A (Tc)
Vgs(Max)2.5W (Ta), 139W (Tc)
MinRdsOn)2.2V @ 250µA
PackageTape & Reel (TR),Cut Tape (CT),Digi-Reel®
PowerDissipation(Max)PG-TDSON-8-1
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