Transition Frequency (fT) | 100MHz |
---|---|
Operating Temperature | +150u2103@(Tj) |
Transistor Type | NPN |
DC Current Gain (hFE@Ic,Vce) | - |
Power Dissipation (Pd) | 300mW |
Collector Current (Ic) | 500mA |
Collector-Emitter Saturation Voltage (VCE(sat)@Ic,Ib) | 700mV@500mA,50mA |
Collector-Emitter Breakdown Voltage (Vceo) | 45V |