RdsOn(Max)@Id | 11mOhm @ 180A, 20V |
---|---|
Vgs(th)(Max)@Id | 1224nC @ 20V |
Vgs | 3V @ 9mA |
Configuration | 2 N-Channel (Dual), Schottky |
FETFeature | - |
DraintoSourceVoltage(Vdss) | 1200V (1.2kV) |
OperatingTemperature | Chassis Mount |
ProductStatus | Active |
Package/Case | Module |
GateCharge(Qg)(Max)@Vgs | 23000pF @ 1000V |
Grade | - |
MountingType | Module |
InputCapacitance(Ciss)(Max)@Vds | 2140W |
Series | - |
Qualification | |
SupplierDevicePackage | - |
Technology | Silicon Carbide (SiC) |
Current-ContinuousDrain(Id)@25°C | 337A (Tc) |
Package | Bulk |
Power-Max | -40°C ~ 175°C (TJ) |