RdsOn(Max)@Id | 5V @ 2.5mA |
---|---|
Vgs(th)(Max)@Id | ±30V |
Vgs | 95 nC @ 10 V |
FETFeature | 520W (Tc) |
DraintoSourceVoltage(Vdss) | 500 V |
OperatingTemperature | Through Hole |
DriveVoltage(MaxRdsOn | 10V |
ProductStatus | Active |
Package/Case | - |
GateCharge(Qg)(Max)@Vgs | - |
Grade | |
MountingType | TO-264 [L] |
InputCapacitance(Ciss)(Max)@Vds | - |
Series | POWER MOS 7® |
Qualification | |
SupplierDevicePackage | TO-264-3, TO-264AA |
FETType | N-Channel |
Technology | MOSFET (Metal Oxide) |
Current-ContinuousDrain(Id)@25°C | 46A (Tc) |
Vgs(Max) | 4360 pF @ 25 V |
MinRdsOn) | 100mOhm @ 23A, 10V |
Package | Tube |
PowerDissipation(Max) | -55°C ~ 150°C (TJ) |