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| RdsOn(Max)@Id | 4V @ 250µA |
|---|---|
| Vgs(th)(Max)@Id | ±25V |
| Vgs | 30.5 nC @ 10 V |
| FETFeature | 90W (Tc) |
| DraintoSourceVoltage(Vdss) | 600 V |
| OperatingTemperature | Through Hole |
| DriveVoltage(MaxRdsOn | 10V |
| ProductStatus | Obsolete |
| Package/Case | |
| GateCharge(Qg)(Max)@Vgs | |
| Grade | |
| MountingType | I2PAK |
| InputCapacitance(Ciss)(Max)@Vds | - |
| Series | MDmesh™ II |
| Qualification | |
| SupplierDevicePackage | TO-262-3 Long Leads, I2PAK, TO-262AA |
| FETType | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Current-ContinuousDrain(Id)@25°C | 10A (Tc) |
| Vgs(Max) | 960 pF @ 50 V |
| MinRdsOn) | 410mOhm @ 5A, 10V |
| Package | Tube |
| PowerDissipation(Max) | -55°C ~ 150°C (TJ) |
