Transistor Application | SWITCHING |
---|---|
Surface Mount | YES |
Radiation Hardening | No |
Drain to Source Voltage (Vdss) | 8V |
Drain to Source Resistance | 80mOhm |
Element Configuration | Dual |
Package / Case | SOT-23-6 Thin, TSOT-23-6 |
Lifecycle Status | ACTIVE (Last Updated: 4 days ago) |
Terminal Form | GULL WING |
Number of Pins | 6 |
Operating Mode | ENHANCEMENT MODE |
Number of Elements | 2 |
Max Power Dissipation | 830mW |
Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
Operating Temperature | -55°C~150°C TJ |
Voltage - Load | 1.8V~8V |
Mounting Type | Surface Mount |
Pin Count | 6 |
Resistance | 40MOhm |
Power Dissipation | 830mW |
Packaging | Tape & Reel (TR) |
FET Technology | METAL-OXIDE SEMICONDUCTOR |
Transistor Element Material | SILICON |
Output Type | P-Channel |
Output Configuration | High Side |
Terminal Finish | Tin (Sn) |
Number of Terminations | 6 |
Height | 1mm |
ECCN Code | EAR99 |
Width | 1.7mm |
Lead Free | Lead Free |
Pbfree Code | yes |
RoHS Status | ROHS3 Compliant |
Drain to Source Breakdown Voltage | 8V |
Gate to Source Voltage (Vgs) | 8V |
Current Rating | 3.3A |
Switch Type | General Purpose |
Ratio - Input:Output | 1:1 |
Rds On (Typ) | 40m Ω |
JESD-609 Code | e3 |
Factory Lead Time | 2 Weeks |
Number of Outputs | 1 |
Time@Peak Reflow Temperature-Max (s) | 40 |
Peak Reflow Temperature (Cel) | 260 |
Continuous Drain Current (ID) | 3.3A |
Type | General Purpose |
Length | 3.1mm |
Subcategory | Other Transistors |
Part Status | Active |
Published | 2001 |
Interface | On/Off |
Base Part Number | NTGD1100L |
Voltage - Rated DC | 20V |
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