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| Min Operating Temperature | -40 °C |
|---|---|
| Propagation Delay | 15 µs |
| Min Supply Voltage | 5.5 V |
| Mount | Surface Mount |
| Max Supply Voltage | 35 V |
| Output Configuration | High Side |
| RoHS | Compliant |
| Radiation Hardening | No |
| Drain to Source Voltage (Vdss) | 50 V |
| Drain to Source Resistance | 150 mΩ |
| Number of Channels | 1 |
| Voltage | 35 V |
| Number of Pins | 8 |
| Height | 1.5 mm |
| Width | 3.99 mm |
| Lead Free | Contains Lead |
| Max Power Dissipation | 1 W |
| Max Junction Temperature (Tj) | 150 °C |
| Nominal Supply Current | 700 µA |
| On-State Resistance | 130 mΩ |
| Output Current | 1.4 A |
| Current Rating | 1.4 A |
| Turn-On Delay Time | 7 µs |
| Number of Outputs | 1 |
| Resistance | 130 mΩ |
| Max Operating Temperature | 150 °C |
| Power Dissipation | 1 W |
| Continuous Drain Current (ID) | 1.4 A |
| Fault Protection | Over Temperature |
| Length | 4.98 mm |
| Turn-Off Delay Time | 15 µs |
| Operating Supply Voltage | 35 V |
| Output Current per Channel | 1.4 A |
| Packaging | Tape & Reel (TR) |
| Current | 1.4 A |
| Interface | On/Off |
| Max Output Current | 1.4 A |
| Case/Package | SOIC |
Infineon
Power Field-Effect Transistor, 7.1A I(D), 500V, 0.52ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251, GREEN, PLASTIC, TO-251, 3 PIN
