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IPA65R280E6XKSA1

IPA65R280E6XKSA1

Infineon Technologies

MOSFET N-CH 650V 13.8A TO220-FP

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Products Specifications
RdsOn(Max)@Id3.5V @ 440µA
Vgs(th)(Max)@Id±20V
Vgs45 nC @ 10 V
FETFeature32W (Tc)
DraintoSourceVoltage(Vdss)650 V
OperatingTemperatureThrough Hole
DriveVoltage(MaxRdsOn10V
ProductStatusNot For New Designs
Package/Case-
GateCharge(Qg)(Max)@Vgs-
Grade
MountingTypePG-TO220-FP
InputCapacitance(Ciss)(Max)@Vds-
SeriesCoolMOS™
Qualification
SupplierDevicePackageTO-220-3 Full Pack
FETTypeN-Channel
TechnologyMOSFET (Metal Oxide)
Current-ContinuousDrain(Id)@25°C13.8A (Tc)
Vgs(Max)950 pF @ 100 V
MinRdsOn)280mOhm @ 4.4A, 10V
PackageTube
PowerDissipation(Max)-55°C ~ 150°C (TJ)
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