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| Min Operating Temperature | -40 °C |
|---|---|
| Schedule B | 8542390000|8542390000, 8542390000|8542390000|8542390000|8542390000|8542390000 |
| RoHS | Compliant |
| Drain to Source Voltage (Vdss) | 60 V |
| Operating Supply Current | 12 A |
| Number of Channels | 1 |
| Lifecycle Status | Production (Last Updated: 2 years ago) |
| Voltage | 60 V |
| Number of Pins | 3 |
| Height | 4.4 mm |
| Width | 9.25 mm |
| Rds On Max | 30 mΩ |
| Max Power Dissipation | 149 W |
| On-State Resistance | 30 mΩ |
| REACH SVHC | No SVHC |
| Output Current | 12 A |
| Turn-On Delay Time | 100 µs |
| Max Dual Supply Voltage | 60 V |
| Number of Outputs | 1 |
| Resistance | 25 mΩ |
| Max Operating Temperature | 150 °C |
| Power Dissipation | 149 W |
| Nominal Input Voltage | 60 V |
| Length | 10 mm |
| Turn-Off Delay Time | 170 ns |
| Halogen Free | Not Halogen Free |
| Output Current per Channel | 12 A |
| Packaging | Tape & Reel |
| Package Quantity | 1000 |
| Current | 12 A |
| Output Voltage | 60 V |
| Max Output Current | 100 A |
| Case/Package | TO-263-3 |
Infineon
Power Field-Effect Transistor, 17A I(D), 50V, 0.1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, 3 PIN
Infineon
Power Field-Effect Transistor, 17A I(D), 50V, 0.1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220AB, 3 PIN
Infineon
Power Field-Effect Transistor, 15.5A I(D), 50V, 0.12ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220AB, 3 PIN
