Min Operating Temperature | -55 °C |
---|---|
Gate to Source Voltage (Vgs) | 10 V |
Mount | Surface Mount |
Fall Time | 50 ns |
Turn-On Delay Time | 15 ns |
RoHS | Compliant |
Radiation Hardening | No |
Max Operating Temperature | 150 °C |
Power Dissipation | 50 W |
Continuous Drain Current (ID) | 15.5 A |
Rise Time | 70 ns |
Turn-Off Delay Time | 70 ns |
Packaging | Tape & Reel |
Number of Pins | 3 |
Number of Elements | 1 |
Case/Package | SMD/SMT |
Infineon
Power Field-Effect Transistor, 15.5A I(D), 50V, 0.12ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220AB, 3 PIN