Min Operating Temperature | -55 °C |
---|---|
Drain to Source Breakdown Voltage | 50 V |
Gate to Source Voltage (Vgs) | 10 V |
Mount | Through Hole |
Current Rating | 15.5 A |
Fall Time | 50 ns |
Turn-On Delay Time | 15 ns |
RoHS | Compliant |
Max Operating Temperature | 150 °C |
Drain to Source Voltage (Vdss) | 50 V |
Power Dissipation | 50 W |
Drain to Source Resistance | 120 mΩ |
Continuous Drain Current (ID) | 15.5 A |
Element Configuration | Single |
Length | 15.4 mm |
Turn-Off Delay Time | 70 ns |
Number of Pins | 3 |
Input Capacitance | 735 pF |
Voltage Rating (DC) | 50 V |
Rds On Max | 120 mΩ |
Case/Package | TO-220-3 |
Max Power Dissipation | 50 W |
Infineon
Power Field-Effect Transistor, 15.5A I(D), 50V, 0.12ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220AB, 3 PIN