Min Operating Temperature | -55 °C |
---|---|
Drain to Source Breakdown Voltage | 50 V |
Gate to Source Voltage (Vgs) | 10 V |
Mount | Through Hole |
Fall Time | 50 ns |
Turn-On Delay Time | 15 ns |
RoHS | Compliant |
Max Operating Temperature | 150 °C |
Power Dissipation | 50 W |
Drain to Source Resistance | 120 mΩ |
Continuous Drain Current (ID) | 15.5 A |
Element Configuration | Single |
Rise Time | 70 ns |
Turn-Off Delay Time | 70 ns |
Packaging | Tape & Reel |
Number of Pins | 3 |
Case/Package | TO-220AB |
Infineon
Power Field-Effect Transistor, 17A I(D), 50V, 0.1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, 3 PIN
Infineon
Power Field-Effect Transistor, 17A I(D), 50V, 0.1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220AB, 3 PIN