Min Operating Temperature | -55 °C |
---|---|
Gate to Source Voltage (Vgs) | 20 V |
Mount | Through Hole |
Fall Time | 55 ns |
Turn-On Delay Time | 20 ns |
RoHS | Compliant |
Radiation Hardening | No |
Max Operating Temperature | 150 °C |
Drain to Source Voltage (Vdss) | 100 V |
Power Dissipation | 40 W |
Continuous Drain Current (ID) | 10 A |
Rise Time | 45 ns |
Turn-Off Delay Time | 70 ns |
Number of Pins | 3 |
Number of Elements | 1 |
Input Capacitance | 600 pF |
Rds On Max | 200 mΩ |
Case/Package | TO-220AB |
Max Power Dissipation | 40 W |
Infineon
Power Field-Effect Transistor, 17A I(D), 50V, 0.1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, 3 PIN
Infineon
Power Field-Effect Transistor, 17A I(D), 50V, 0.1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220AB, 3 PIN