Min Operating Temperature | -55 °C |
---|---|
Fall Time | 55 ns |
RoHS | Compliant |
Drain to Source Voltage (Vdss) | 100 V |
Drain to Source Resistance | 200 mΩ |
Element Configuration | Single |
Number of Channels | 1 |
Number of Pins | 3 |
Input Capacitance | 600 pF |
Lead Free | Contains Lead |
Rds On Max | 200 mΩ |
Max Power Dissipation | 40 W |
Drain to Source Breakdown Voltage | 100 V |
Gate to Source Voltage (Vgs) | 20 V |
Current Rating | 10 A |
Turn-On Delay Time | 20 ns |
Max Dual Supply Voltage | 100 V |
Max Operating Temperature | 150 °C |
Power Dissipation | 40 W |
Continuous Drain Current (ID) | 10 A |
Rise Time | 45 ns |
Turn-Off Delay Time | 70 ns |
Halogen Free | Not Halogen Free |
Voltage Rating (DC) | 100 V |
Case/Package | TO-220AB |
Infineon
Power Field-Effect Transistor, 15.5A I(D), 50V, 0.12ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220AB, 3 PIN