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1N5415

1N5415

Microchip Technology

DIODE GEN PURP 50V 3A AXIAL

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Products Specifications
Current-ReverseLeakage@Vr1 µA @ 50 V
SpeedFast Recovery =< 500ns, > 200mA (Io)
F-
ProductStatusActive
Package/CaseThrough Hole
Grade-65°C ~ 175°C
Capacitance@Vr-
ReverseRecoveryTime(trr)150 ns
MountingType-
Series-
Qualification
SupplierDevicePackageB, Axial
Voltage-Forward(Vf)(Max)@If1.5 V @ 9 A
TechnologyStandard
Voltage-DCReverse(Vr)(Max)50 V
OperatingTemperature-JunctionB, Axial
Current-AverageRectified(Io)3A
PackageBulk
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